Method of manufacturing a semiconductor device

摘要

A method of manufacturing a semiconductor device includes forming a device structure in a surface of a semiconductor substrate, forming, in a face of the semiconductor substrate, a transition metal layer that contacts the semiconductor substrate, and exposing the semiconductor substrate having the transition metal layer formed thereon to a hydrogen plasma atmosphere formed by microwaves to cause the transition metal layer to generate heat. During exposure of the semiconductor substrate to the hydrogen plasma atmosphere, a portion of the semiconductor substrate contacting the transition metal layer is heated by a transfer of the heat from the transition metal layer, and an ohmic contact is formed at an interface of the transition metal layer and the semiconductor substrate by reaction of the transition metal layer and the semiconductor substrate. When the semiconductor substrate is silicon carbide, the ohmic contact is composed of a silicide, such as a transition metal silicide.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming a device structure in a surface of the semiconductor substrate; forming, in a face of the semiconductor substrate, a transition metal layer that contacts the semiconductor substrate; and exposing the semiconductor substrate having the transition metal layer formed thereon to a hydrogen plasma atmosphere for a predetermined period, wherein the hydrogen plasma atmosphere is formed to have a predetermined plasma density by microwaves having a predetermined electric energy so as to heat only the transition metal layer to a predetermined temperature, and wherein during exposing the semiconductor substrate to the hydrogen plasma atmosphere, a portion of the semiconductor substrate contacting the transition metal layer is heated by a transfer of the heat from the transition metal layer, and an ohmic contact is formed at an interface of the transition metal layer and the semiconductor substrate by reaction of the transition metal layer and the semiconductor substrate.