Method for controlling the breakdown of an antifuse memory cell

摘要

A method for controlling the breakdown of an antifuse memory cell formed on a semiconductor substrate, including the steps of: applying a programming voltage; detecting a breakdown time; and interrupting the application of the programming voltage at a time following the breakdown time by a post-breakdown time.

主权项

1. A method, comprising:
controlling an antifuse memory cell formed on an active area of a semiconductor substrate, the controlling including:
applying a programming voltage to a terminal of the antifuse memory cell;detecting a breakdown in the antifuse memory cell, the detecting including detecting a bulk current generated in a portion of the substrate that is outside of the active area; andinterrupting the applying of the programming voltage after a time period after detecting the breakdown, wherein the interrupting includes:interrupting the applying of the programming voltage in response to detecting the breakdown at a first time; andinterrupting the applying of the programming voltage at a second time equal to the first time plus the time period.