Memory device having a different source line coupled to each of a plurality of layers of memory cell arrays

摘要

A sensing voltage may be applied to a particular memory cell that is in a particular layer of a plurality of layers of memory cells. While the sensing voltage is applied to the particular memory cell, a source voltage may be applied to an end of a string of memory cells that includes the particular memory cell. The source line voltage may be based on a programming rate of the particular layer.

主权项

1. A method for operating a memory device that comprises a memory array that comprises a plurality of layers of memory cells, the method comprising:
applying a sensing voltage to a particular memory cell that is in a particular layer of the plurality of layers of memory cells; and applying a source voltage to an end of a string of memory cells that includes the particular memory cell while applying the sensing voltage to the particular memory cell; wherein the source voltage is based on a programming rate of the particular layer; and wherein the source voltage being based on the programming rate of the particular layer comprises the source voltage being greater for a slower programming rate of the particular layer than for a faster programming rate of the particular layer.