Method of singulating semiconductor wafer having back layer

摘要

In one embodiment, die are singulated from a wafer having a back layer by placing the wafer onto a first carrier substrate with the back layer adjacent the carrier substrate, forming singulation lines through the wafer to expose the back layer within the singulation lines, and using a mechanical device to apply localized pressure to the wafer to separate the back layer in the singulation lines. The localized pressure can be applied through the first carrier substrate proximate to the back layer, or can be applied through a second carrier substrate attached to a front side of the wafer opposite to the back layer.

主权项

1. A method of singulating die from a wafer comprising:
providing a wafer having a plurality of die formed as part of the wafer and separated from each other by spaces, wherein the wafer has first and second opposing major surfaces, and wherein a layer of material is disposed along the second major surface; placing the wafer onto a first carrier substrate, wherein the layer of material is adjacent the first carrier substrate; singulating the wafer through the spaces to form singulation lines while the wafer is coupled to the first carrier substrate, wherein the singulation lines terminate before penetrating completely through the layer of material; placing a substrate adjacent the first major surface, wherein the wafer is interposed between the substrate and the first carrier substrate; and moving a mechanical device along the substrate to separate the layer of material in the singulation lines.