Method for forming a metal silicide using a solution containing gold ions and fluorine ions

摘要

A subject matter of the invention is a process for the formation of nickel silicide or of cobalt silicide, comprising the stages consisting in:
exposing the surface of the silicon-comprising substrate with an aqueous solution comprising from 0.1 mM to 10 mM of gold ions and from 0.6 M to 3.0 M of fluorine ions for a duration of between 5 seconds and 5 minutes,depositing by an electroless route, on the activated substrate, a layer essentially composed of nickel or of cobalt,applying a rapid thermal annealing at a temperature of between 300° C. and 750° C., so as to form the nickel silicide or the cobalt silicide.;The aqueous solution comprises a surface-active agent chosen from the compounds comprising at least one anionic or nonionic polar group and an alkyl chain comprising from 10 to 16 carbon atoms.;This process essentially has applications in the manufacture of NAND memories and photovoltaic cells.

主权项

1. A process for forming nickel silicide or cobalt silicide on a silicon-comprising substrate, said process comprising the steps of:
bringing a surface of the silicon-comprising substrate into contact with an aqueous solution comprising gold ions and fluoride ions in order to form particles of metallic gold on said surface, wherein the aqueous solution comprises a surface-active agent selected from the group consisting of compounds comprising at least one anionic or one nonionic polar group, and one alkyl chain comprising from 10 to 16 carbon atoms depositing—by an electroless route—a layer essentially composed of nickel or of cobalt, on the obtained surface covered with particles of metallic gold, wherein the thickness of the layer is between 10 and 45 nm, and the variation in the thickness of the layer is less than 10%, and applying a rapid thermal annealing at a temperature of between 300° C. and 750° C., so as to form nickel silicide or cobalt silicide.