| 发明名称 | Elastic wave device | ||
| 摘要 | An elastic wave device making use of an SH plate wave propagating in LiNbO3 substrates includes a LiNbO3 substrate, IDT electrodes located on at least one surface of the LiNbO3 substrate, and a support which is bonded to the LiNbO3 substrate such that the support is located outside a region provided with the IDT electrodes and supports the LiNbO3 substrate, wherein θ of the Euler angles (0°, θ, 0°) of the LiNbO3 substrate ranges from about 92° to about 138° and the thickness of the LiNbO3 substrate ranges from about 0.05λ to about 0.25λ, where λ is the wavelength determined by the pitch between electrode fingers of the IDT electrodes. | ||
| 申请公布号 | US9564873(B2) | 申请公布日期 | 2017.02.07 |
| 申请号 | US201414170883 | 申请日期 | 2014.02.03 |
| 申请人 | MURATA MANUFACTURING CO., LTD. | 发明人 | Kadota Michio |
| 分类号 | H03H9/02;H03H9/25 | 主分类号 | H03H9/02 |
| 代理机构 | Keating & Bennett, LLP | 代理人 | Keating & Bennett, LLP |
| 主权项 | 1. An elastic wave device comprising: a LiNbO3 substrate; an IDT electrode located on at least one surface of the LiNbO3 substrate; and a support arranged on the LiNbO3 substrate such that the support is located outside a region provided with the IDT electrode and supports the LiNbO3 substrate; wherein an elastic wave propagating in the LiNbO3 substrate is an SH plate wave; and θ of Euler angles (0°, θ, 0°) of the LiNbO3 substrate ranges from about 92° to about 138° and a thickness of the LiNbO3 substrate ranges from about 0.05λ to about 0.25λ, where λ is a wavelength determined by a pitch between electrode fingers of the IDT electrode. | ||
| 地址 | Kyoto JP | ||