| 发明名称 | Multi-bit ferroelectric memory device and methods of forming the same | ||
| 摘要 | Multi-bit ferroelectric memory devices and methods of forming the same are provided. One example method of forming a multi-bit ferroelectric memory device can include forming a first ferroelectric material on a first side of a via, removing a material to expose a second side of the via, and forming second ferroelectric material on the second side of the via at a different thickness compared to the first side of the via. | ||
| 申请公布号 | US9564576(B2) | 申请公布日期 | 2017.02.07 |
| 申请号 | US201514941088 | 申请日期 | 2015.11.13 |
| 申请人 | Micron Technology, Inc. | 发明人 | Karda Kamal M.;Gealy F. Daniel;Ramaswamy D. V. Nirmal;Mouli Chandra V. |
| 分类号 | G11C11/22;H01L43/02;H01L43/12;G11C11/56;H01L27/115;H01L49/02 | 主分类号 | G11C11/22 |
| 代理机构 | Brooks, Cameron & Huebsch, PLLC | 代理人 | Brooks, Cameron & Huebsch, PLLC |
| 主权项 | 1. A memory device, comprising: a first ferroelectric material formed on an interior side of a via; and a second ferroelectric material formed on an exterior side of the via; wherein the first ferroelectric material has a different thickness than the second ferroelectric material. | ||
| 地址 | Boise ID US | ||