Thin film transistors, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors

摘要

Thin film transistors including a semiconductor channel disposed between a drain electrode and a source electrode; and a gate insulating layer disposed between the semiconductor channel and a gate electrode wherein the semiconductor channel includes a first metal oxide, the gate insulating layer includes a second metal oxide, and at least one metal of the second metal oxide is the same as at least one metal of the first metal oxide, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors.

主权项

1. A thin film transistor comprising:
a semiconductor channel disposed between a drain electrode and a source electrode; and a gate insulating layer disposed between the semiconductor channel and a gate electrode, wherein the semiconductor channel includes a first metal oxide, the gate insulating layer includes a second metal oxide, the second metal oxide not being identical to the first metal oxide, at least a portion of the gate insulating layer that includes the second metal oxide is in direct contact with the semiconductor channel, the first metal oxide and the second metal oxide commonly include at least one of indium tin oxide (ITO), zinc tin oxide (ZTO), and indium zinc tin oxide (IZTO), and at least one of the first metal oxide and the second metal oxide includes one of cerium (Ce), hafnium (Hf), tantalum (Ta), lanthanum (La), niobium (Nb), yttrium (Y) and combinations thereof.