| 发明名称 | Oxidation and etching post metal gate CMP | ||
| 摘要 | A method includes forming a dummy gate of a transistor at a surface of a wafer, removing the dummy gate, and filling a metallic material into a trench left by the removed dummy gate. A Chemical Mechanical Polish (CMP) is then performed on the metallic material, wherein a remaining portion of the metallic material forms a metal gate of the transistor. After the CMP, a treatment is performed on an exposed top surface of the metal gate using an oxidation-and-etching agent comprising chlorine and oxygen. | ||
| 申请公布号 | US9564511(B2) | 申请公布日期 | 2017.02.07 |
| 申请号 | US201514937301 | 申请日期 | 2015.11.10 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Liu Chi-Jen;Wu Li-Chieh;Chen Liang-Guang;Suen Shich-Chang |
| 分类号 | H01L21/00;H01L29/66;H01L21/02;H01L21/321;H01L21/768;H01L21/28;H01L29/49;H01L29/51 | 主分类号 | H01L21/00 |
| 代理机构 | Slater Matsil, LLP | 代理人 | Slater Matsil, LLP |
| 主权项 | 1. A method comprising: forming a dummy gate of a transistor at a surface of a wafer; removing the dummy gate; filling a metallic material into a trench left by the removed dummy gate to form a metal gate; performing a treatment on a top surface of the metal gate using an oxidation-and-etching agent comprising chlorine and oxygen; and forming a dielectric layer over the treated metal gate. | ||
| 地址 | Hsin-Chu TW | ||