发明名称 |
Apparatus and methods for forming a modulation doped non-planar transistor |
摘要 |
Embodiments of an apparatus and methods for providing three-dimensional complementary metal oxide semiconductor devices comprising modulation doped transistors are generally described herein. Other embodiments may be described and claimed, which may include forming a modulation doped heterostructure, comprising forming an active portion having a first bandgap and forming a delta doped portion having a second bandgap. |
申请公布号 |
US9564490(B2) |
申请公布日期 |
2017.02.07 |
申请号 |
US201514985282 |
申请日期 |
2015.12.30 |
申请人 |
Intel Corporation |
发明人 |
Pillarisetty Ravi;Hudait Mantu;Radosavljevic Marko;Rachmady Willy;Dewey Gilbert;Kavalieros Jack |
分类号 |
H01L29/772;H01L29/12;H01L29/15;H01L29/66;H01L21/8238;H01L29/06;H01L29/205;H01L29/207 |
主分类号 |
H01L29/772 |
代理机构 |
Winkle, PLLC |
代理人 |
Winkle, PLLC |
主权项 |
1. A method for forming a non-planar transistor, comprising:
forming a modulation doped heterostructure comprising:
forming an active portion having a first bandgap; andforming a delta doped portion having a second bandgap, wherein forming the delta doped portion consists of forming a bottom barrier layer, forming a delta doping layer, and forming a spacer layer. |
地址 |
Santa Clara CA US |