发明名称 Apparatus and methods for forming a modulation doped non-planar transistor
摘要 Embodiments of an apparatus and methods for providing three-dimensional complementary metal oxide semiconductor devices comprising modulation doped transistors are generally described herein. Other embodiments may be described and claimed, which may include forming a modulation doped heterostructure, comprising forming an active portion having a first bandgap and forming a delta doped portion having a second bandgap.
申请公布号 US9564490(B2) 申请公布日期 2017.02.07
申请号 US201514985282 申请日期 2015.12.30
申请人 Intel Corporation 发明人 Pillarisetty Ravi;Hudait Mantu;Radosavljevic Marko;Rachmady Willy;Dewey Gilbert;Kavalieros Jack
分类号 H01L29/772;H01L29/12;H01L29/15;H01L29/66;H01L21/8238;H01L29/06;H01L29/205;H01L29/207 主分类号 H01L29/772
代理机构 Winkle, PLLC 代理人 Winkle, PLLC
主权项 1. A method for forming a non-planar transistor, comprising: forming a modulation doped heterostructure comprising: forming an active portion having a first bandgap; andforming a delta doped portion having a second bandgap, wherein forming the delta doped portion consists of forming a bottom barrier layer, forming a delta doping layer, and forming a spacer layer.
地址 Santa Clara CA US