| 主权项 |
1. A light emitting device comprising:
a conductive support substrate; a first light emitting structure disposed on the conductive support substrate and comprising a first conductive type first semiconductor layer, a first active layer under the first conductive type first semiconductor layer, and a second conductive type second semiconductor layer under the first active layer; a first reflective electrode under the first light emitting structure; a first metal layer surrounding side surfaces of the first reflective electrode, the first metal layer directly and physically contacting a bottom surface of the first reflective electrode; a second light emitting structure disposed on the conductive support substrate and comprising a first conductive type third semiconductor layer, a second active layer under the first conductive type third semiconductor layer, and a second conductive type fourth semiconductor layer under the second active layer, the second light emitting structure spaced apart from the first light emitting structure; a second reflective electrode under the second light emitting structure; a second metal layer surrounding side surfaces of the second reflective electrode, the second metal layer directly and physically contacting a bottom surface of the second reflective electrode; a contact part making contact with an inner portion of the first conductive type first semiconductor layer of the first light emitting structure and electrically connected to the second reflective electrode; and an insulating layer, wherein a top surface of the second metal layer is exposed between the first light emitting structure and the second light emitting structure, wherein an end portion of the contact part is directly and physically connected to a bottom surface of the second metal layer, wherein a side surface of the contact part is directly and physically contacting a side surface of the second metal layer, and wherein the conductive support substrate is electrically connected to a bottom surface of the second conductive type second semiconductor layer, and wherein a part of the insulating layer is disposed between the conductive support substrate and the second metal layer, and wherein a top surface of the part of the insulating layer directly and physically contacts a bottom surface of the second metal layer. |
