发明名称 Method to harden photoresist for directed self-assembly processes
摘要 A patterned photoresist is provided atop a substrate. A hardening agent is applied to the patterned photoresist to provide a polymeric coated patterned photoresist. The polymeric coated patterned photoresist is baked to provide a hardened photoresist, and subsequent the baking step, the polymeric coating is removed from the hardened photoresist by rinsing. The hardened photoresist can be removed anytime during the patterning of the substrate by an aqueous resist developer.
申请公布号 US9563122(B2) 申请公布日期 2017.02.07
申请号 US201514697669 申请日期 2015.04.28
申请人 International Business Machines Corporation 发明人 Cheng Joy;Colburn Matthew E.;Liu Chi-Chun
分类号 G03F7/40;G03F7/039;H01L21/308 主分类号 G03F7/40
代理机构 Scully, Scott, Murphy & Presser, P.C. 代理人 Scully, Scott, Murphy & Presser, P.C. ;Morris, Esq. Daniel P.
主权项 1. A method of forming a hardened photoresist, said method comprises: forming a patterned photoresist atop a substrate; coating said patterned photoresist with a hardening agent to provide a polymeric coating surrounding said patterned photoresist, said hardening agent consisting of a thermal acid generator; baking said polymeric coating and said patterned photoresist to provide a hardened photoresist, said hardened photoresist having a different polarity than said patterned photoresist; and rinsing said hardened photoresist to remove said polymeric coating from said hardened photoresist.
地址 Armonk NY US