发明名称 |
Isolation region fabrication for replacement gate processing |
摘要 |
A method for isolation region fabrication for replacement gate integrated circuit (IC) processing includes forming a plurality of dummy gates on a substrate; forming a block mask over the plurality of dummy gates, such that the block mask selectively exposes a dummy gate of the plurality of dummy gates; removing the exposed dummy gate to form an isolation region recess corresponding to the removed dummy gate; filling the isolation region recess with an insulating material to form an isolation region; removing the block mask to expose a remaining plurality of dummy gates; and performing replacement gate processing on the remaining plurality of dummy gates to form a plurality of active devices, wherein at least two of the plurality of active devices are electrically isolated from each other by the isolation region. |
申请公布号 |
USRE46303(E1) |
申请公布日期 |
2017.02.07 |
申请号 |
US201514872790 |
申请日期 |
2015.10.01 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Anderson Brent A.;Nowak Edward J. |
分类号 |
H01L21/338;H01L29/66;H01L21/28;H01L27/12;H01L21/84;H01L21/762 |
主分类号 |
H01L21/338 |
代理机构 |
Myers Bigel, P.A. |
代理人 |
Myers Bigel, P.A. |
主权项 |
1. A method for isolation region fabrication for replacement gate integrated circuit (IC) processing, the method comprising:
forming a plurality of dummy gates on a substrate; forming a block mask over the plurality of dummy gates, such that the block mask selectively exposes a dummy gate of the plurality of dummy gates; removing the exposed dummy gate to form an isolation region recess corresponding to the removed dummy gate; filling the isolation region recess with an insulating material to form an isolation region; removing the block mask to expose a remaining plurality of dummy gates; and performing replacement gate processing on the remaining plurality of dummy gates to form a plurality of active devices, wherein at least two of the plurality of active devices are electrically isolated from each other by the isolation region. |
地址 |
KR |