| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device includes a first pre-stress block suitable for generating a first load signal, which corresponds to an active signal during an active mode and/or to a high voltage level during a precharge mode, in response to a stress section signal; a first delay amount reflection block suitable for reflecting a first delay amount in the first load signal in response to one or more first delay amount control signals; and a first main stress block suitable for generating a word line driving control signal, which corresponds to the active signal during the active mode and the high voltage level during the precharge mode, in response to the stress section signal and the first load signal. |
| 申请公布号 |
US2017033778(A1) |
申请公布日期 |
2017.02.02 |
| 申请号 |
US201615000154 |
申请日期 |
2016.01.19 |
| 申请人 |
SK hynix Inc. |
发明人 |
Chi Sung-Soo;Heo Young-Sik |
| 分类号 |
H03K5/14;H03K3/037;G11C11/4076;G11C11/4093;G11C11/4094 |
主分类号 |
H03K5/14 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a first pre-stress block suitable for generating a first load signal, which corresponds to an active signal during an active mode and/or to a high voltage level during a precharge mode, in response to a stress section signal; a first delay amount reflection block suitable for reflecting a first delay amount in the first load signal in response to one or more first delay amount control signals; and a first main stress block suitable for generating a word line driving control signal, which corresponds to the active signal during the active mode and the high voltage level during the precharge mode, in response to the stress section signal and the first load signal. |
| 地址 |
Gyeonggi-do KR |
