SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A first source electrode is formed in contact with a semiconductor layer; a first drain electrode is formed in contact with the semiconductor layer; a second source electrode which extends beyond an end portion of the first source electrode to be in contact with the semiconductor layer is formed; a second drain electrode which extends beyond an end portion of the first drain electrode to be in contact with the semiconductor layer is formed; a first sidewall is formed in contact with a side surface of the second source electrode and the semiconductor layer; a second sidewall is formed in contact with a side surface of the second drain electrode and the semiconductor layer; and a gate electrode is formed to overlap the first sidewall, the second sidewall, and the semiconductor layer with a gate insulating layer provided therebetween.

主权项

1. A method for manufacturing a semiconductor device including a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode, a drain electrode and sidewalls, the method comprising the steps of:
forming the source electrode and the drain electrode in contact with the semiconductor layer; forming the sidewalls by introducing oxygen to end portions of the source electrode and the drain electrode; forming the gate insulating layer so that the gate insulating layer overlaps the semiconductor layer and the sidewalls; and forming the gate electrode so that the gate electrode overlaps the gate insulating layer.