| 发明名称 |
SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF |
| 摘要 |
In accordance with various embodiments of the disclosed subject matter, a semiconductor device, and a fabricating method thereof are provided. In some embodiments, the semiconductor device comprises: a semiconductor substrate, wherein a plurality of fins are projected on a surface of the semiconductor substrate; and an insulating layer on side walls of the plurality of fins, wherein the insulating layer is located on the surface of the semiconductor substrate, a surface of the insulating layer is lower than top surfaces of the plurality of fins, and a thermal conductivity of the insulating layer is larger than a thermal conductivity of silicon oxide. |
| 申请公布号 |
US2017033190(A1) |
申请公布日期 |
2017.02.02 |
| 申请号 |
US201615212984 |
申请日期 |
2016.07.18 |
| 申请人 |
Semiconductor Manufacturing International (Beijing) Corporation ;Semiconductor Manufacturing International (Shanghai) Corporation |
发明人 |
XIE XINYUN;ZHOU MING |
| 分类号 |
H01L29/40;H01L29/78;H01L21/3105;H01L21/02;H01L21/762;H01L29/06;H01L29/66 |
主分类号 |
H01L29/40 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a semiconductor substrate, wherein a plurality of fins are projected on a surface of the semiconductor substrate; and an insulating layer on side walls of the plurality of fins, wherein the insulating layer is located on the surface of the semiconductor substrate, a surface of the insulating layer is lower than top surfaces of the plurality of fins, and a thermal conductivity of the insulating layer is larger than a thermal conductivity of silicon oxide. |
| 地址 |
Beijing CN |
