SEMICONDUCTOR STRUCTURE WITH A SILICON GERMANIUM ALLOY FIN AND SILICON GERMANIUM ALLOY PAD STRUCTURE

摘要

A semiconductor structure is provided that includes a silicon germanium alloy fin having a second germanium content located on a first portion of a substrate. The structure further includes a laterally graded silicon germanium alloy material portion located on a second portion of the substrate. The laterally graded silicon germanium alloy material portion is spaced apart from the silicon germanium alloy fin and has end portions having the second germanium content and a middle portion located between the end portions that has a first germanium content that is less than the second germanium content.

主权项

1. A method of forming a semiconductor structure, said method comprising:
providing a fin structure comprising, from bottom to top, a silicon material fin portion, a silicon germanium alloy fin portion having a first germanium content and a first width, and a hard mask material fin portion and located on a first portion of a substrate, and a pre-pad structure comprising, from bottom to top, a silicon material portion, a silicon germanium alloy material portion having said first germanium content, and a hard mask material portion and located on a second portion of a substrate; and performing a condensation oxidation to convert both of said silicon material fin portion and said silicon germanium alloy fin portion into a silicon germanium alloy fin having a second germanium content and a second width, wherein said second germanium content is greater than said first germanium content and wherein said second width is less than said first width, while simultaneously converting said silicon material portion and said silicon germanium alloy material portion having said first germanium content into a laterally graded silicon germanium alloy material portion.