发明名称 |
FLUOROCARBON MOLECULES FOR HIGH ASPECT RATIO OXIDE ETCH |
摘要 |
Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures. |
申请公布号 |
US2017032976(A1) |
申请公布日期 |
2017.02.02 |
申请号 |
US201615264772 |
申请日期 |
2016.09.14 |
申请人 |
American Air Liquide, Inc. |
发明人 |
ANDERSON Curtis;GUPTA Rahul;OMARJEE Vincent M.;STAFFORD Nathan;DUSSARRAT Christian |
分类号 |
H01L21/3213 |
主分类号 |
H01L21/3213 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method of depositing an etch-resistant polymer layer, the method comprising plasma activating a fluorocarbon molecule to form the etch-resistant polymer layer, the fluorocarbon molecule selected from the group consisting of trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); and hexafluorocyclobutane (cis-1,1,2,2,3,4). |
地址 |
Fremont CA US |