| 发明名称 |
ORGANIC PHOTODETECTOR AND IMAGE SENSOR |
| 摘要 |
An organic photodetector includes an anode and a cathode facing each other and an active layer between the anode and the cathode and including a p-type semiconductor and an n-type semiconductor, wherein an energy barrier between the anode or the cathode and the active layer is greater than or equal to about 1.3 eV, a difference between a HOMO energy level of the p-type semiconductor and a LUMO energy level of the n-type semiconductor is greater than or equal to about 0.8 eV. |
| 申请公布号 |
US2017033303(A1) |
申请公布日期 |
2017.02.02 |
| 申请号 |
US201614995318 |
申请日期 |
2016.01.14 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
KIM Kyusik;KIM Jang-Joo;KIM Dae-Ho |
| 分类号 |
H01L51/42;H01L27/30;H01L51/44 |
主分类号 |
H01L51/42 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An organic photodetector comprising:
an anode and a cathode facing each other; and an active layer between the anode and the cathode, the active layer including a p-type semiconductor and an n-type semiconductor, wherein a difference between a highest occupied molecular orbital (HOMO) energy level of the p-type semiconductor and a lowest unoccupied molecular orbital (LUMO) energy level of the n-type semiconductor is greater than or equal to about 0.8 eV, and wherein an energy barrier between the active layer and one of the anode and the cathode is greater than or equal to about 1.3 eV |
| 地址 |
Suwon-si KR |
