APPARATUSES FOR THIN FILM DEPOSITION

摘要

In accordance with some embodiments herein, apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

主权项

1. An atomic layer deposition (ALD) reactor comprising:
a first station and a second station, wherein the first station is configured to contain a first substrate and to contact the first substrate with a first reactant in gas isolation from the second station, such that no more than one monolayer of the first reactant is adsorbed on the first substrate, wherein the second station is configured to contain the first substrate and to contact the first substrate with a second reactant in gas isolation from the first station and substantially in the absence of the first reactant, wherein the second reactant is different from the first reactant and reacts with the no more than one monolayer of the first reactant on the first substrate to form a desired material; and a transfer system configured to place the first substrate in the second station after contacting the first substrate with the first reactant, and configured to place the first substrate in the first station after contact the first substrate with the second reactant, wherein the transfer system comprises a transfer member for transferring the first substrate from the first station to the second station and vice versa; an intermediate space, outside of the first station and the second station, configured to accommodate the transfer system; and a controller set to control a cycle of:
moving the substrate via the transfer member to the first station, moving the transfer member to the intermediate space, directing the first station to contact the first substrate with the first reactant, moving the substrate to the second station via the transfer member, moving the transfer member to the intermediate space, and directing the second station to contact the first substrate with the second reactant, andfurther set to repeat the cycle until a film of desired thickness is selectively formed on the first surface but not the second surface, wherein no surface of the ALD reactor is substantially contacted with more than one of the first reactant and second reactant.