发明名称 |
SEMICONDUCTOR DEVICE FOR RADIO FREQUENCY SWITCH, RADIO FREQUENCY SWITCH, AND RADIO FREQUENCY MODULE |
摘要 |
Provided is a semiconductor device for radio frequency switch that includes an SOI substrate and a gate electrode. The SOI substrate includes a buried oxide film and a semiconductor layer on a carrier substrate. The gate electrode is provided on the semiconductor layer. The semiconductor layer includes a first area below the gate electrode and a second area other than the first area. A third area is provided in at least part of the second area. A fourth area is provided in at least part of the first area. The fourth area has a different thickness from a thickness of the third area. |
申请公布号 |
US2017033784(A1) |
申请公布日期 |
2017.02.02 |
申请号 |
US201515303072 |
申请日期 |
2015.03.25 |
申请人 |
SONY CORPORATION |
发明人 |
KURANOUCHI Atsushi |
分类号 |
H03K17/16;H01L29/78;H01L27/12;H03K17/693 |
主分类号 |
H03K17/16 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device for radio frequency switch, comprising:
an SOI substrate including a buried oxide film and a semiconductor layer on a carrier substrate; and a gate electrode provided on the semiconductor layer, wherein the semiconductor layer includes a first area below the gate electrode and a second area other than the first area, a third area is provided in at least part of the second area, and a fourth area is provided in at least part of the first area, the fourth area having a different thickness from a thickness of the third area. |
地址 |
Tokyo JP |