LOW-TEMPERATURE POLYCRYSTALLINE SILICON THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR

摘要

Provided are a low-temperature polycrystalline silicon thin-film transistor and a manufacturing method therefor. The method comprises: forming a semiconductor layer (102) and a low-temperature polycrystalline silicon layer (103) on the same surface of a substrate layer (101); forming an oxide layer (104) on one side of the semiconductor layer (102) which is away from the substrate layer (101) and forming an oxide layer (104) on one side of the low-temperature polycrystalline silicon layer (103) which is away from the substrate layer (101); forming a plurality of first photoresist layers (105) with a first preset thickness on the oxide layers (104); providing a corresponding first cobalt layer (106) on each first photoresist layer (105); doping high-concentration doping ions in a first specific area (1021) in the semiconductor layer (102); removing the first cobalt layers (106), and subjecting the plurality of first photoresist layers (105) to a partial ashing treatment to obtain a plurality of second photoresist layers (107) with a second preset thickness; providing a corresponding second cobalt layer (108) on each second photoresist layer (107); doping low-concentration doping ions in a second specific area (1022) in the semiconductor layer (102); and removing the second cobalt layers (108), subjecting the second photoresist layers (107) to a complete ashing treatment and removing the second photoresist layers (107). The number of photomasking times can be lowered, and the production time is shortened.