CONTACT STRUCTURE FOR HIGH ASPECT RATIO AND METHOD OF FABRICATING THE SAME

摘要

A method of fabricating semiconductor device includes forming a plurality of gate structures on a semiconductor substrate. A fist inter layer dielectric layer is deposited on the gate structures. A first contact plug is formed in the first inter layer dielectric layer in between every two immediately adjacent gate structures. An etch stop layer is deposited on the first inter layer dielectric layer. A second inter layer dielectric layer is deposited on the first inter layer dielectric layer. A second contact plug is formed in the second inter layer dielectric layer aligning with the first contact plug. A metal layer is deposited overlying the second inter layer dielectric layer and the second contact plug.

主权项

1. A method of fabricating semiconductor device, comprising:
forming a plurality of gate structures on a semiconductor substrate; depositing a first inter layer dielectric layer over the gate structures; forming a first contact plug in the first inter layer dielectric layer in between every two immediately adjacent gate structures, comprising:
disposing a light mask on the first inter layer dielectric layer; andpatterning the first inter layer dielectric layer according to the light mask to form a first contact hole; depositing an etch stop layer on the first inter layer dielectric layer; depositing a second inter layer dielectric layer on the etch stop layer; forming a second contact plug in the second inter layer dielectric layer aligning with the first contact plug, comprising:
disposing the light mask on the second inter layer dielectric layer; andpatterning the second inter layer dielectric layer according to the light mask to form a second contact hole; and depositing a metal layer overlying the second inter layer dielectric layer and the second contact plug.