| 发明名称 |
POROUS FIN AS COMPLIANT MEDIUM TO FORM DISLOCATION-FREE HETEROEPITAXIAL FILMS |
| 摘要 |
A method for forming a heteroepitaxial layer includes forming an epitaxial grown layer on a monocrystalline substrate and patterning the epitaxial grown layer to form fins. The fins are converted to porous fins. A surface of the porous fins is treated to make the surface suitable for epitaxial growth. Lattice mismatch is compensated for between an epitaxially grown monocrystalline layer grown on the surface and the monocrystalline substrate by relaxing the epitaxially grown monocrystalline layer using the porous fins to form a relaxed heteroepitaxial interface with the monocrystalline substrate. |
| 申请公布号 |
US2017032963(A1) |
申请公布日期 |
2017.02.02 |
| 申请号 |
US201514812797 |
申请日期 |
2015.07.29 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Cheng Kangguo;Fogel Keith E.;Kim Jeehwan;Sadana Devendra K. |
| 分类号 |
H01L21/02;H01L29/04;H01L21/30;H01L29/165 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a heteroepitaxial layer, comprising:
forming an epitaxial grown layer on a monocrystalline substrate; patterning the epitaxial grown silicon layer to form fins; converting the fins to porous fins; treating a surface of the porous fins to make the surface suitable for epitaxial growth; and compensating for lattice mismatch of an epitaxially grown monocrystalline layer grown on the surface by relaxing the epitaxially grown monocrystalline layer using the porous fins to form a relaxed heteroepitaxial interface with the monocrystalline substrate. |
| 地址 |
Armonk NY US |
