| 摘要 |
Provided are a low-temperature polysilicon array substrate, a manufacturing method therefor and a display device. The method comprises the steps as follows: a flat layer (2) is formed on an electrode (1), and the flat layer (2) is formed by a cleaning procedure, a dehydration baking procedure, a hydrophobic treatment procedure, a photoresist coating procedure, a vacuum drying procedure, a prebaking procedure, an exposing procedure, a developing procedure, a baking procedure and an ashing procedure in sequence, wherein the baking procedure comprises baking at least twice at different baking temperatures. The method can play an initial solidification role on an organic film of the flat layer (2), so that the problem of an excessively small Taper angle at a via hole (3) due to the photoresist liquidity is improved. |
