发明名称 CRYSTALLINE OXIDE SEMICONDUCTOR THIN FILM, METHOD FOR PRODUCING CRYSTALLINE OXIDE SEMICONDUCTOR THIN FILM, AND THIN FILM TRANSISTOR
摘要 Provided is a crystalline oxide semiconductor thin film characterized by containing indium oxide as a primary component and containing surface crystal particles having a single crystal orientation.
申请公布号 WO2017017966(A1) 申请公布日期 2017.02.02
申请号 WO2016JP03528 申请日期 2016.07.29
申请人 IDEMITSU KOSAN CO.,LTD. 发明人 INOUE, Kazuyoshi;UTSUNO, Futoshi;TSURUMA, Yuki;TOMAI, Shigekazu;EBATA, Kazuaki
分类号 H01L21/205;C01G15/00;H01L21/20;H01L21/336;H01L21/363;H01L29/786 主分类号 H01L21/205
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