发明名称 |
CRYSTALLINE OXIDE SEMICONDUCTOR THIN FILM, METHOD FOR PRODUCING CRYSTALLINE OXIDE SEMICONDUCTOR THIN FILM, AND THIN FILM TRANSISTOR |
摘要 |
Provided is a crystalline oxide semiconductor thin film characterized by containing indium oxide as a primary component and containing surface crystal particles having a single crystal orientation. |
申请公布号 |
WO2017017966(A1) |
申请公布日期 |
2017.02.02 |
申请号 |
WO2016JP03528 |
申请日期 |
2016.07.29 |
申请人 |
IDEMITSU KOSAN CO.,LTD. |
发明人 |
INOUE, Kazuyoshi;UTSUNO, Futoshi;TSURUMA, Yuki;TOMAI, Shigekazu;EBATA, Kazuaki |
分类号 |
H01L21/205;C01G15/00;H01L21/20;H01L21/336;H01L21/363;H01L29/786 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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