METHOD FOR DEPOSITING SILICON NITRIDE THIN FILM AT LOW TEMPERATURE

摘要

Provided is a method for depositing a silicon nitride thin film at a low temperature, comprising: controlling the temperature of an object stage; mounting a substrate; aerating SiH4, NH3, and N2; providing a radio frequency by a radio frequency system, and depositing a thin film by means of a plasma technology; performing after-treatment; and vacuumizing. The method brings a small temperature rise in a deposition process, achieves layered deposition, does not affect the performance of a thin film, and can be used for OLED packaging.