NON-VOLATILE RESISTANCE MEMORY DEVICES INCLUDING A VOLATILE SELECTOR WITH COPPER AND TANTALUM OXIDE

摘要

A nonvolatile memory cell includes a volatile selector electrically coupled in series with a nonvolatile resistance memory device. The nonvolatile resistance memory device may be a switching oxide or switching nitride sandwiched between a first bottom electrode and a first top electrode. The volatile selector may be a selector oxide matrix sandwiched between a second bottom electrode and a second top electrode. The selector oxide matrix includes tantalum oxide, while one or both of the second bottom electrode and the second top electrode includes copper. A memory array utilizing the memory cell and a method for manufacturing the memory array are also provided.