| 摘要 |
According to one embodiment, a semiconductor device includes first and second gate electrodes, a semiconductor layer, an output electrode, and an insulating layer. The semiconductor layer includes first source and drain areas, a first channel area facing the first gate electrode, second source and drain areas, and a second channel area facing the second gate electrode. The output electrode outputs voltage produced in the first and second drain areas. In the semiconductor device, the first drain area is in contact with the second drain area. The insulating layer includes a hole portion communicating with one of the first and second drain areas. The output electrode is in contact with one of the first and second drain areas via the hole portion. |
| 主权项 |
1. A semiconductor device comprising:
a first gate electrode and a second gate electrode; a semiconductor layer comprising: first source and drain areas of a p-type transistor; a first channel area which is provided between the first source area and the first drain area, and faces the first gate electrode; second source and drain areas of an n-type transistor; and a second channel area which is provided between the second source area and the second drain area, and faces the second gate electrode; an output electrode which outputs voltage produced in the first drain area and the second drain area; and an insulating layer provided between the semiconductor layer and the output electrode, wherein the first drain area is in contact with the second drain area, the insulating layer comprises a hole portion communicating with one of the first and second drain areas, and the output electrode is in contact with one of the first and second drain areas via the hole portion. |
