| 摘要 |
Provided is a conductive layer (10) in a semiconductor apparatus, comprising a metal sub-layer (11) and an anti-reflective coating over the metal sub-layer (11) for reducing light reflection on the metal sub-layer (11), wherein the anti-reflective coating comprises a light absorption sub-layer (12) on the metal sub-layer (11) for reducing light reflection by absorption and a light destructive interference sub-layer (13) on a side of the light absorption layer (12) distal to the metal sub-layer (11) for reducing light reflection by destructive interference, and the metal sub-layer (11) is made of a material comprising M1, wherein M1 is a single metal or a combination of metals, the light absorption sub-layer (12) is made of a material comprising M2O aN b, wherein M2 is a single metal or a combination of metals, a > 0, and b ≥ 0, the light destructive interference sub-layer (13) is made of a material comprising M3O c, wherein M3 is a single metal or a combination of metals, and c > 0, the light absorption sub-layer (12) has a refractive index larger than that of the light destructive interference sub-layer (13). |
