| 摘要 |
A thin film transistor (TFT) panel structure and manufacturing method thereof. The manufacturing method comprises: forming a graphene layer (5) above a semiconductor layer (4); fabricating a second metal layer (6), and then injecting fluoride ions into the graphene layer (5) by using the second metal layer (6) as a mask; and forming a modification area on the graphene layer and corresponding to a channel area (41). The graphene layer in the modification area has an isolation property and a water or oxygen insulation property and provides protection for the channel area. The graphene layer below a source and a drain (61, 62) is not doped by ions and maintains excellent electrical conductivity of graphene. As a result, the source and drain can be electrically connected to the semiconductor layer without requiring to dispose a through hole in the graphene layer, enabling favorable I-V output performance and stability of a manufactured TFT device, reducing a mask process, shortening a production period, and decreasing manufacturing costs. |
