Systems and Methods for Implementing Magnetoelectric Junctions Including Integrated Magnetization Components

摘要

Systems and methods in accordance with embodiments of the invention implement magnetoelectric junctions that include integrated magnetization components. In one embodiment, a magnetoelectric junction includes: a first fixed layer; a free layer; a dielectric layer disposed between the first fixed layer and the free layer; at least one magnetization layer that is disposed proximate the free layer; where: the first fixed layer is magnetized in a first direction; the free layer can adopt a magnetization direction that is either substantially parallel with or antiparallel with the first direction; the at least one magnetization layer is magnetized in a second direction that is orthogonal to the first direction; the magnetoelectric junction is characterized by a VCMA coefficient of at least approximately 80 fJ/V·m; and the magnetoelectric junction is configured such that a voltage pulse of a proper length in time can cause the free layer to invert its magnetization direction.

主权项

1. A magnetoelectric junction comprising:
a first ferromagnetic fixed layer; a ferromagnetic free layer that is magnetically anisotropic; a dielectric layer that is disposed between the first ferromagnetic fixed layer and the ferromagnetic free layer;
wherein:
each of the ferromagnetic fixed layer, the ferromagnetic free layer, and the dielectric layer are characterized by a planar surface extruded through a thickness; andthe ferromagnetic free layer, the dielectric layer, and the ferromagnetic fixed layer define a stack with an outer surface characterized by its inclusion of the perimeters of said planar surfaces; at least one magnetization layer that is disposed proximate the ferromagnetic free layer; wherein:
the first ferromagnetic fixed layer is magnetized in a first direction;the ferromagnetic free layer can adopt a magnetization direction that is either substantially parallel with or substantially antiparallel with the first direction;the at least one magnetization layer is magnetized in a second direction that is orthogonal to the first direction;the magnetoelectric junction is characterized by a VCMA coefficient of at least approximately 80 fJ/V·m; andthe magnetoelectric junction is configured such that a voltage pulse of a proper length in time can cause the ferromagnetic free layer to invert its magnetization direction.