| 发明名称 |
TRENCH STRUCTURE OF SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
A trench structure of a semiconductor device includes a substrate, an isolation structure, and a liner layer. The substrate has a trench therein. The isolation structure is disposed in the trench. The liner layer is disposed between the substrate and the isolation structure. The liner layer includes nitrogen, and the liner layer has spatially various nitrogen concentration. |
| 申请公布号 |
US2017033179(A1) |
申请公布日期 |
2017.02.02 |
| 申请号 |
US201514812864 |
申请日期 |
2015.07.29 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIN Jia-Ming;JANGJIAN Shiu-Ko;LIN Chun-Che;WANG Ying-Lang;LIN Wei-Ken;LIU Chuan-Pu |
| 分类号 |
H01L29/06;H01L21/8234;H01L21/3065;H01L21/324;H01L21/3105;H01L27/088;H01L21/762 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A trench structure of a semiconductor device, comprising:
a substrate having a trench therein, wherein the trench has a bottom surface, a top portion, and a bottom portion, and the bottom portion is closer to the bottom surface than the top portion; an isolation structure disposed in the trench; and a liner layer disposed between the substrate and the isolation structure, wherein the liner layer comprises nitrogen, and a nitrogen concentration of the liner layer at the top portion is higher than a nitrogen concentration of the liner layer at the bottom portion. |
| 地址 |
HSINCHU TW |
