| 发明名称 |
WAFER PROCESSING METHOD |
| 摘要 |
Disclosed herein is a wafer processing method in which laser processing is carried out on a wafer along streets. The wafer processing method includes a step of holding the wafer by a chuck table, a protective film forming step of forming a water-soluble protective film on a surface of the wafer, a laser beam irradiating step of irradiating the wafer with a laser beam along the streets after the protective film forming step, a step of supplying a chemical having an amino group to the wafer, and a removing step of cleaning and removing a compound that is generated by the supplying of the chemical having an amino group and contains phosphorus. |
| 申请公布号 |
US2017032985(A1) |
申请公布日期 |
2017.02.02 |
| 申请号 |
US201615219499 |
申请日期 |
2016.07.26 |
| 申请人 |
DISCO CORPORATION |
发明人 |
Ryo Senichi;Matsumoto Hirokazu;Yoshikawa Toshiyuki;Ohura Yukinobu |
| 分类号 |
H01L21/67;B23K26/18;B23K26/402;H01L29/20;B23K26/364 |
主分类号 |
H01L21/67 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A wafer processing method in which a wafer in which devices are formed in a plurality of regions marked out by a plurality of streets formed in a lattice manner on a surface of a substrate composed of a phosphorus compound and metal electrodes are formed over the surface is subjected to laser processing along the streets, the wafer processing method comprising:
a step of holding the wafer by a chuck table; a protective film forming step of forming a water-soluble protective film on a surface of the wafer; a laser beam irradiating step of irradiating the wafer with a laser beam along the streets after the protective film forming step; a step of supplying a chemical having an amino group to the wafer; and a removing step of cleaning and removing a compound that is generated on the wafer by the supplying of the chemical and contains phosphorus. |
| 地址 |
Tokyo JP |
