| 摘要 |
Provided is a method for producing, on a silicon carbide single-crystal substrate having a small off-angle, an epitaxial silicon carbide single-crystal wafer that has a high-quality silicon carbide single-crystal thin film having few basal plane dislocations. This method for producing an epitaxial silicon carbide single-crystal wafer by growing, via epitaxial growth, silicon carbide on a silicon carbide single-crystal substrate via a thermal CVD method is characterized in that after an etching gas is made to flow in an epitaxial growth furnace and the surface of the silicon carbide single-crystal substrate is etched such that the arithmetic average roughness Ra of the surface falls within the range of 0.5 nm to 3.0 nm, the epitaxial growth is started, and at least 95% of the basal plane dislocations in the surface of the silicon carbide single-crystal substrate are converted into threading-edge dislocations. |
