发明名称 |
GAAS THIN FILM GROWN ON SI SUBSTRATE, AND PREPARATION METHOD FOR GAAS THIN FILM GROWN ON SI SUBSTRATE |
摘要 |
Disclosed is a preparation method for a GaAs thin film grown on an Si substrate, said method comprising the following steps: (1) Si (111) substrate cleaning ; (2) Si (111) substrate preprocessing; (3) Si (111) substrate oxide film removal; (4) first InxGa1-xAs buffer layer growth; (5) first InxGa1-xAs buffer layer in situ annealing; (6) GaAs buffer layer growth; (7) GaAs buffer layer in situ annealing; (8) second InxGa1-xAs buffer layer growth; (9) second InxGa1-xAs buffer layer in situ annealing; (10) GaAs epitaxial thin film growth. Also disclosed is a GaAs thin film grown on an Si substrate. The GaAs thin film obtained by the present invention has a good crystal quality, an even surface, and a positive promotional significance with regard to the preparation of semiconductor devices, particularly in the field of solar cells. |
申请公布号 |
WO2017016527(A2) |
申请公布日期 |
2017.02.02 |
申请号 |
WO2016CN95921 |
申请日期 |
2016.08.18 |
申请人 |
SOUTH CHINA UNIVERSITY OF TECHNOLOGY |
发明人 |
LI, Guoqiang;GAO, Fangliang;WEN, Lei;ZHANG, Shuguang;LI, Jingling |
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