| 发明名称 |
AIR GAP CONTACT FORMATION FOR REDUCING PARASITIC CAPACITANCE |
| 摘要 |
A functional gate structure is located on a surface of a semiconductor material portion and including a U-shaped gate dielectric portion and a gate conductor portion. A source region is located on one side of the functional gate structure, and a drain region is located on another side of the functional gate structure. The source region and drain region both have a topmost surface that is above a topmost surface of the semiconductor material portion and another surface that touches a portion of the U-shaped gate dielectric. A contact structure is located on the topmost surface of the source region and/or the drain region. A middle-of-the-line air gap contact is located between the contact structure and the functional gate structure and above at least one of the source region and the drain region. The middle-of-the-line air gap contact is sealed by a portion of a conformal dielectric material. |
| 申请公布号 |
US2017033223(A1) |
申请公布日期 |
2017.02.02 |
| 申请号 |
US201615294391 |
申请日期 |
2016.10.14 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Leobandung Effendi |
| 分类号 |
H01L29/78;H01L23/535;H01L29/08;H01L21/768 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor structure comprising:
a functional gate structure located on a surface of a semiconductor material portion and including a U-shaped gate dielectric portion and a gate conductor portion; a source region located on one side of the functional gate structure, wherein said source region has a topmost surface that is above a topmost surface of said semiconductor material portion and another surface that touches a portion of said U-shaped gate dielectric; a drain region located on another side of the functional gate structure, said drain region has a topmost surface that is above a topmost surface of said semiconductor material portion and another surface that touches a portion of said U-shaped gate dielectric; a contact structure located on said topmost surface of said at least one of said source region and said drain region; and a middle-of-the-line air gap contact located between said contact structure and said functional gate structure and above at least one of said source region and said drain region, wherein said middle-of-the-line air gap contact is sealed by a portion of a conformal dielectric material. |
| 地址 |
Armonk NY US |
