发明名称 |
Electrode for a metal-insulator-metal structure, capacitor of metal-insulator-metal type, and method for fabricating one such electrode and one such capacitor. |
摘要 |
The electrode for a structure of Metal-Insulator-Metal type is formed by a stack successively comprising a gold layer, a barrier layer made from electrically conducting oxide and a platinum layer.;The electrically conducting oxide is advantageously a noble metal oxide, and preferentially ruthenium oxide.;The electrode is arranged on a substrate. The gold layer of the electrode is separated from the substrate by an adhesion layer made from titanium dioxide.;The electrode is used to fabricate a capacitor of Metal-Insulator-Metal type. |
申请公布号 |
US2017033174(A1) |
申请公布日期 |
2017.02.02 |
申请号 |
US201615220869 |
申请日期 |
2016.07.27 |
申请人 |
COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ;STMICROELECTRONICS (CROLLES 2) SAS |
发明人 |
RODRIGUEZ Guillaume;HALIMAOUI Aomar;ORTIZ Laurent |
分类号 |
H01L49/02 |
主分类号 |
H01L49/02 |
代理机构 |
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代理人 |
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主权项 |
1. Electrode for a structure of Metal-Insulator-Metal type formed by a stack successively comprising a gold layer, a barrier layer made from electrically conducting oxide and a platinum layer. |
地址 |
Paris FR |