发明名称 Electrode for a metal-insulator-metal structure, capacitor of metal-insulator-metal type, and method for fabricating one such electrode and one such capacitor.
摘要 The electrode for a structure of Metal-Insulator-Metal type is formed by a stack successively comprising a gold layer, a barrier layer made from electrically conducting oxide and a platinum layer.;The electrically conducting oxide is advantageously a noble metal oxide, and preferentially ruthenium oxide.;The electrode is arranged on a substrate. The gold layer of the electrode is separated from the substrate by an adhesion layer made from titanium dioxide.;The electrode is used to fabricate a capacitor of Metal-Insulator-Metal type.
申请公布号 US2017033174(A1) 申请公布日期 2017.02.02
申请号 US201615220869 申请日期 2016.07.27
申请人 COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ;STMICROELECTRONICS (CROLLES 2) SAS 发明人 RODRIGUEZ Guillaume;HALIMAOUI Aomar;ORTIZ Laurent
分类号 H01L49/02 主分类号 H01L49/02
代理机构 代理人
主权项 1. Electrode for a structure of Metal-Insulator-Metal type formed by a stack successively comprising a gold layer, a barrier layer made from electrically conducting oxide and a platinum layer.
地址 Paris FR