| 发明名称 |
Semiconductor Devices and Methods of Forming Thereof |
| 摘要 |
In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a contact layer over a first major surface of a substrate. The substrate includes device regions separated by kerf regions. The contact layer is disposed in the kerf region and the device regions. A structured solder layer is formed over the device regions. The contact layer is exposed at the kerf region after forming the structured solder layer. The contact layer and the substrate in the kerf regions are diced. |
| 申请公布号 |
US2017033066(A1) |
申请公布日期 |
2017.02.02 |
| 申请号 |
US201615295631 |
申请日期 |
2016.10.17 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Napetschnig Evelyn;Fastner Ulrike;Heinrich Alexander;Fischer Thomas |
| 分类号 |
H01L23/00;H01L21/304;H01L21/268;H01L23/31;H01L21/78 |
主分类号 |
H01L23/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a contact layer disposed over a first major surface of a substrate; and a solder pad disposed over the contact layer, wherein the solder pad overlaps with a central portion of the contact layer, and wherein a remaining peripheral portion of the contact layer comprising a surface parallel to the first major surface of the substrate is part of an exposed surface of the semiconductor device. |
| 地址 |
Neubiberg DE |
