| 摘要 |
The present disclosure relates to nanoscale device comprising an elongated crystalline nanostructure, such as a nanowire crystal, a nanowhisker crystal or a nanorod crystal, and a method for producing thereof. One embodiment relates to a nanoscale device comprising an elongated crystalline semiconductor nanostructure, such as a nanowire (crystal) or nanowhisker (crystal) or nanorod (crystal), preferably made of Indium Arsenide, having a plurality of substantially plane side facets, a crystalline structured first facet layer of a superconductor material, preferably Aluminium, covering at least a part of one or more of said side facets, and a second facet layer of a superconductor material, preferably Vanadium, covering at least a part of the first facet layer, the superconductor material of the second facet layer being different from the superconductor material of the first facet layer, wherein the crystalline structure of the semiconductor nanostructure is epitaxially matched with the crystalline structure of the first facet layer on the interface between the two crystalline structures. |
