发明名称 FACE-TO-FACE SEMICONDUCTOR ASSEMBLY HAVING SEMICONDUCTOR DEVICE IN DIELECTRIC RECESS
摘要 A face-to-face semiconductor assembly is characterized by a semiconductor device positioned in a dielectric recess of a core base and surrounded by an array of metal posts. The recess in the core provides lateral displacement control between the device and the metal posts, and the minimal height of the metal posts needed for the vertical connection between both opposite sides of the core base can be reduced by the amount equal to the depth of the recess. Further, the semiconductor device is face-to-face electrically coupled to another semiconductor device through a buildup circuitry therebetween.
申请公布号 US2017033082(A1) 申请公布日期 2017.02.02
申请号 US201514986547 申请日期 2015.12.31
申请人 BRIDGE SEMICONDUCTOR CORPORATION 发明人 Lin Charles W.C.;Wang Chia-Chung
分类号 H01L25/065;H01L23/498;H01L23/31 主分类号 H01L25/065
代理机构 代理人
主权项 1. A face-to-face semiconductor assembly, comprising: a core base that includes a dielectric layer, a resin sealant layer, an array of metal posts and an array of metallized vias, wherein (i) the dielectric layer has a recess extending from a top surface of the dielectric layer, (ii) the resin sealant layer is disposed over the top surface of the dielectric layer, (iii) the metal posts are disposed in the resin sealant layer, and (iv) the metallized vias are disposed in the dielectric layer and electrically coupled to the metal posts; a first semiconductor device that extends through the resin sealant layer and is attached to a floor of the recess of the dielectric layer by an adhesive, wherein the first semiconductor device has active pads that are substantially coplanar with the metal posts at top surfaces thereof; a top buildup circuitry over top surfaces of the first semiconductor device and the core base, wherein the top buildup circuitry is electrically coupled to the first semiconductor device and the metal posts; and a second semiconductor device over the top buildup circuitry, wherein the second semiconductor device is electrically coupled to the first semiconductor device through the top buildup circuitry, and the second semiconductor device has active pads facing the active pads of the first semiconductor device.
地址 Taipei TW