SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes: a semiconductor element which includes semiconductor substrate, an insulating film formed on a front surface of the semiconductor substrate and having an opening, and an electrode formed in the opening on the front surface of the semiconductor substrate; and a first protective film disposed to cover the semiconductor element. The insulating film has a thickness of not less than 1/500 of a thickness of the semiconductor substrate and not more than 4 μm. The insulating film has a compressive stress per film thickness of not less than 100 MPa/μm.

主权项

1. A semiconductor device comprising:
a semiconductor element including
a semiconductor substrate,an insulating film formed on a front surface of the semiconductor substrate and having an opening, andan electrode formed in the opening on the front surface of the semiconductor substrate; a first protective film disposed to cover the semiconductor element; and a second protective film contacting at least a part of the electrode and at least a part of the insulating film and having an opening exposing the electrode on the insulating film, an elastic modulus of the insulating film being larger than respective elastic modulus of the first protective film and the second protective film, the insulating film having a thickness of not less than 1/500 of a thickness of the semiconductor substrate and not more than 4 μm, and the insulating film having a compressive stress per film thickness of not less than 100 MPa/μm.