发明名称 |
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND SILICON CARBIDE SEMICONDUCTOR DEVICE |
摘要 |
A method of manufacturing a silicon carbide semiconductor device is provided. The method suppresses the increase in the number of manufacturing steps and is capable of suppressing the degradation of ohmic characteristics of an alloy layer with respect to a semiconductor substrate. The method includes a step of forming a metal layer made of a first metal on a semiconductor substrate made of silicon carbide; a step of forming a metal nitride film obtained by nitriding a second metal on the metal layer; a step of directing a laser light through the metal nitride film to form a layer of an alloy of silicon carbide in the semiconductor substrate and the first metal in the metal layer; and a step of forming an electrode on the metal nitride film. |
申请公布号 |
US2017032968(A1) |
申请公布日期 |
2017.02.02 |
申请号 |
US201415302287 |
申请日期 |
2014.04.09 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
NAKANISHI Yosuke;OKABE Hiroaki;YOSHIDA Motoru;SUGAHARA Kazuyuki;TOMINAGA Takaaki |
分类号 |
H01L21/268;H01L21/02;H01L29/872;H01L29/66;H01L29/16;H01L29/47 |
主分类号 |
H01L21/268 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Tokyo JP |