NONVOLATILE MEMORY DEVICE DETECTING DEFECTIVE BIT LINE AT HIGH SPEED AND TEST SYSTEM THEREOF

摘要

A nonvolatile memory device includes a memory cell array, a page buffer connected to bit lines of the memory cell array, a defect detector, and an input/output circuit. The defect detector receives readout data from the page buffer through the bit lines and performs a logical operation based on the readout data for a plurality of column units. The defect detector outputs defective data based on the logical operation. The input/output circuit outputs the defective data based on a control signal.

主权项

1. A nonvolatile memory device, comprising:
a memory cell array; a page buffer connected to bit lines of the memory cell array; a defect detector to receive readout data from the page buffer through the bit lines and to perform a logical operation based on the readout data for a plurality of column units and to output defective data based on the logical operation; and an input/output circuit to output the defective data based on a control signal.