发明名称 |
IDENTIFIER-PROVIDING DEVICE FOR COMPUTER DEVICE |
摘要 |
A mass produced identifier providing device with sufficiently high yield, even when forming a conductive layer pattern having an extremely small thickness/minimum area using a minimum amount of silver paste. The identifier-providing device has a conductive layer pattern formed on a rear surface of a base material as an insulator. The silver paste forming the conductive layer pattern contains only silver flakes, as silver particles, that have a particle size in a range of 3.0 to 5.0 μm and that has a thickness of 100 nm at a largest thickness portion, while having a thickness of 50 nm at a smallest thickness portion. The conductive layer pattern is formed to have a film thickness of 10 μm or less by laminating the silver flakes in the thickness direction. The silver flakes forming the conductive layer are in a fused state or an aggregating/cohering state at the smallest thickness portion. |
申请公布号 |
US2017031478(A1) |
申请公布日期 |
2017.02.02 |
申请号 |
US201615197839 |
申请日期 |
2016.06.30 |
申请人 |
GOCCO. CO., LTD. |
发明人 |
Masayuki Mori;Takashi Kondo;Susumu TAKAGISHI |
分类号 |
G06F3/044;H05K3/12;H05K1/09 |
主分类号 |
G06F3/044 |
代理机构 |
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代理人 |
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主权项 |
1. An identifier providing device for providing a unique identifier as a command for making an information processing device comprising a computer device execute a predetermined information processing, comprising as characteristics:
a base material as an insulator, and a conductive layer pattern formed by coating a silver paste on a predetermined surface of the base material so as to be a predetermined pattern by printing, wherein the silver paste for forming the conductive layer pattern contains, as silver particles, only silver flake having a particle size in a range of 3.0 to 5.0 μm and a thickness at a maximum thickness portion is in a range of 100 nm or less and a thickness at an extremely small thickness portion is in a range of 50 nm or less wherein the conductive layer pattern is formed by laminating the silver flakes in a thickness direction such that a film thickness is in a range of 10 μm or less, and wherein the silver flakes forming the conductive layer is in a fused state or in an aggregated/cohering state with each other at the extremely small thickness portion. |
地址 |
Gifu JP |