| 发明名称 |
LEAKAGE-FREE IMPLANTATION-FREE ETSOI TRANSISTORS |
| 摘要 |
A semiconductor device includes an extremely thin semiconductor-on-insulator substrate (ETSOI) having a base substrate, a thin semiconductor layer and a buried dielectric therebetween. A device channel is formed in the thin semiconductor layer. Source and drain regions are formed at opposing positions relative to the device channel. The source and drain regions include an n-type material deposited on the buried dielectric within a thickness of the thin semiconductor layer. A gate structure is formed over the device channel. |
| 申请公布号 |
US2017033177(A1) |
申请公布日期 |
2017.02.02 |
| 申请号 |
US201514814064 |
申请日期 |
2015.07.30 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
de Souza Joel P.;Fogel Keith E.;Kim Jeehwan;Sadana Devendra K. |
| 分类号 |
H01L29/06;H01L29/66;H01L29/08;H01L21/425;H01L29/267;H01L29/26;H01L29/786;H01L21/02 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
an extremely thin semiconductor-on-insulator substrate (ETSOI) having a base substrate, a thin semiconductor layer and a buried dielectric therebetween; a device channel formed in the thin semiconductor layer; source and drain regions formed at opposing positions relative to the device channel, the source and drain regions including an n-type material deposited on the buried dielectric within a thickness of the thin semiconductor layer, wherein the n-type material includes a II-VI material; and a gate structure formed over the device channel. |
| 地址 |
Armonk NY US |
