MAGNETIC RANDOM ACCESS MEMORY WITH MULTILAYERED SEED STRUCTURE

摘要

The present invention is directed to a magnetic random access memory element that includes a multilayered seed structure formed by interleaving multiple layers of a first transition metal with multiple layers of a second transition metal; and a first magnetic layer formed on top of the multilayered seed structure. The first magnetic layer has a multilayer structure formed by interleaving layers of the first transition metal with layers of a magnetic material and has a first fixed magnetization direction substantially perpendicular to a layer plane thereof The first transition metal is platinum or palladium, while the second transition metal is selected from the group consisting of tantalum, titanium, zirconium, hafnium, vanadium, niobium, chromium, molybdenum, and tungsten.

主权项

1. A magnetic random access memory element comprising:
a multilayered seed structure formed by interleaving multiple layers of a first transition metal with multiple layers of a second transition metal; and a first magnetic layer formed on top of said multilayered seed structure, said first magnetic layer having a multilayer structure formed by interleaving layers of said first transition metal with layers of a magnetic material and having a first fixed magnetization direction substantially perpendicular to a layer plane thereof, wherein said first and second transition metals are non-magnetic.