SEMICONDUCTOR DEVICE INCLUDING FIN STRUCTURES DISPOSED OVER BUFFER STRUCTURES AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor FET device includes a buffer structure and a fin structure. The buffer structure has a fin shape, is disposed over a substrate and extends along a first direction. The fin structure includes a channel region of the FET device, is disposed on the buffer structure and extends along the first direction. The width of the buffer structure along a second direction perpendicular to the first direction is greater than the width of the fin structure along the second direction measured at an interface between the buffer structure and the fin structure.

主权项

1. A method for manufacturing a semiconductor device, comprising:
forming a buffer structure over a substrate, the buffer structure having a fin-shape and extending along a first direction, the buffer structure having a different lattice constant than the substrate; and after forming the fin-shaped buffer structure, forming a fin structure over an upper surface of the fin-shaped buffer structure, wherein a width of the buffer structure along a second direction perpendicular to the first direction is greater than a width of the fin structure along the second direction measured at an interface between the buffer structure and the fin structure, the upper surface of the buffer structure being in contact with a bottom of the fin structure at the interface.