发明名称 METHODS OF DESIGNING A LAYOUT OF A SEMICONDUCTOR DEVICE INCLUDING FIELD EFFECT TRANSISTOR AND METHODS OF MANUFACTURING A SEMICONDUTOR DEVICE USING THE SAME
摘要 A method of designing a semiconductor device includes preparing a standard cell layout including a layout out a preliminary pin pattern in at least one interconnection layout, performing a routing step to connect the preliminary pin pattern to a high-level interconnection layout, and generating a pin pattern in the interconnection layout, based on hitting information obtained at the completion of the routing step. The pin pattern is smaller than the preliminary pin pattern.
申请公布号 US2017032074(A1) 申请公布日期 2017.02.02
申请号 US201615184227 申请日期 2016.06.16
申请人 SONG TAEJOONG;BAEK SANGHOON;CHO SUNGWE;DO JUNG-HO;YANG GIYOUNG;LIM JINYOUNG 发明人 SONG TAEJOONG;BAEK SANGHOON;CHO SUNGWE;DO JUNG-HO;YANG GIYOUNG;LIM JINYOUNG
分类号 G06F17/50;H01L21/768 主分类号 G06F17/50
代理机构 代理人
主权项 1. A method of producing a layout of a semiconductor device, comprising: providing a standard cell layout, the providing of the standard cell layout comprising creating a preliminary pin pattern of an interconnection layout of the standard cell layout; performing a routing step to produce a high-level interconnection layout in which a the preliminary pin pattern is connected to a high-level interconnection pattern; and generating a postliminary pin pattern in a region of the interconnection layout of the standard cell layout, based on hitting information obtained upon the completion of the routing step, wherein the postliminary pin pattern is smaller than the preliminary pin pattern.
地址 SEONGNAM-SI KR