HIGH PRESSURE RF-DC SPUTTERING AND METHODS TO IMPROVE FILM UNIFORMITY AND STEP-COVERAGE OF THIS PROCESS

摘要

Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

主权项

1. A plasma processing chamber, comprising:
a target having a first surface that is in contact with a processing region and a second surface that is opposite the first surface; an RF power supply coupled to the target; a DC power supply coupled to the target; a substrate support having a substrate receiving surface; and a center feed that is electrically coupled to the target, wherein the center feed includes a length (A), an inner diameter (D1), and an outer diameter (D2), wherein a surface area aspect ratio of the center feed is between about 0.001/mm and about 0.025/mm, wherein the surface area aspect ratio is calculated by A/(πD1A+πD2A).